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STGY40NC60VD
N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESHTM IGBT
Table 1: General Features
TYPE STGY40NC60VD
s s
Figure 1: Package
IC @100C 50 A
VCES 600 V
VCE(sat) (Max) @25C < 2.5 V
s
s s s
s
HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY ENERGY OFF LOSSES INCLUDE TAIL CURRENT LOWER CRES / CIES RATIO VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRUBUTION
2 1
Max247 Weight: 4.96gr 0.01 Max Clip Pressure: 150 N/mm2
3
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "V" identifies a family optimized for high frequency.
Figure 2: Internal Schematic Diagram
APPLICATIONS HIGH FREQUENCY INVERTERS s SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s UPS s MOTOR DRIVERS
s
Table 2: Order Codes
SALES TYPE STGY40NC60VD MARKING GY40NC60VD PACKAGE Max247 PACKAGING TUBE
Rev.8 July 2004 1/11
STGY40NC60VD
Table 3: Absolute Maximum ratings
Symbol VCES VECR VGE IC IC ICM (1) IF PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at 25C (#) Collector Current (continuous) at 100C (#) Collector Current (pulsed) Diode RMS Forward Current at TC =25C Total Dissipation at TC = 25C Derating Factor Storage Temperature Operating Junction Temperature Value 600 20 20 80 50 200 30 260 2.08 - 55 to 150 Symbol V V V A A A A W W/C C
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
Min. Rthj-case Rthj-case Rthj-amb TL Thermal Resistance Junction-case (IGBT) Thermal Resistance Junction-case (Diode) Thermal Resistance Junction-ambient Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) ---Typ. ---300 Max. 0.48 1.5 50 Unit C/W C/W C/W C
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 5: Off
Symbol VBR(CES) ICES Parameter Collectro-Emitter Breakdown Voltage Collector-Emitter Leakage Current (VCE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 1 mA, VGE = 0 VGE = Max Rating Tc=25C Tc=125C VGE = 20 V , VCE = 0 Min. 600 Typ. Max. Unit V
10 1 100
A mA nA
IGES
Table 6: On
Symbol VGE(th) VCE(SAT) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE= VGE, IC= 250 A VGE= 15 V, IC= 40A, Tj= 25C VGE= 15 V, IC= 40A, Tj= 125C Min. 3.75 1.9 1.7 Typ. Max. 5.75 2.5 Unit V V V
(#) Calculated according to the iterative formula: T -T JMAX C I ( T ) = ------------------------------------------------------------------------------------------------CC R xV (T , I ) THJ - C CESAT ( M AX ) C C
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ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic
Symbol gfs(1) Cies Coes Cres Qg Qge Qgc ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-Off SOA Minimum Current Test Conditions VCE = 15 V, IC= 20 A VCE = 25V, f = 1 MHz, VGE = 0 Min. Typ. 20 4550 350 105 214 30 96 200 Max. Unit S pF pF pF nC nC nC A
VCE = 390 V, IC = 40 A, VGE = 15V, (see Figure 21) Vclamp = 480 V , Tj = 150C RG = 100 , VGE= 15V Test Conditions VCC = 390 V, IC = 40 A RG= 3.3, VGE= 15V, Tj= 25C (see Figure 19) VCC = 390 V, IC = 40 A RG= 3.3, VGE= 15V, Tj= 125C (see Figure 19)
Table 8: Switching On
Symbol td(on) tr (di/dt)on Eon (2) td(on) tr (di/dt)on Eon (2) Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses Min. Typ. 43 17 2060 330 42 19 1900 640 Max. Unit ns ns A/s J ns ns A/s J
450
2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25C and 125C)
Table 9: Switching Off
Symbol tr(Voff) td(off) tf Eoff (3) Ets tr(Voff) td(off) tf Eoff (3) Ets Parameter Off Voltage Rise Time Turn-off Delay Time Current Fall Time Turn-off Switching Loss Total Switching Loss Off Voltage Rise Time Turn-off Delay Time Current Fall Time Turn-off Switching Loss Total Switching Loss Vcc = 390 V, IC = 40 A, RGE = 3.3 , VGE = 15 V Tj = 125 C (see Figure 19) Test Conditions Vcc = 390 V, IC = 40 A, RGE = 3.3 , VGE = 15 V TJ = 25 C (see Figure 19) Min. Typ. 25 140 45 720 1050 60 170 77 1400 2040 970 1420 Max. Unit ns ns ns
J J
ns ns ns
J J
(3)Turn-off losses include also the tail of the collector current.
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Table 10: Collector-Emitter Diode
Symbol Vf trr ta Qrr Irrm S trr ta Qrr Irrm S Parameter Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode Test Conditions If = 20 A If = 20 A, Tj = 125 C If = 20 A ,VR = 40 V, Tj = 25C, di/dt = 100 A/s (see Figure 22) Min. Typ. 1.5 1 44 32 66 3 0.375 88 56 237 5.4 0.57 Max. 2.2 Unit V V ns ns nC A ns ns nC A
If = 20 A ,VR = 40 V, Tj =125C, di/dt = 100 A/s (see Figure 22)
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STGY40NC60VD
Figure 3: Output Characteristics Figure 6: Transfer Characteristics
Figure 4: Transconductance
Figure 7: Collector-Emitter On Voltage vs Temperature
Figure 5: Collector-Emitter On Voltage vs Collector Current
Figure 8: Normalized Gate Threshold vs Temperature
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Figure 9: Normalized Breakdown Voltage vs Temperature Figure 12: Gate Charge vs Gate-Emitter Voltage
Figure 10: Capacitance Variations
Figure 13: Total Switching Losses vs Temperature
Figure 11: Total Switching Losses vs Gate Resistance
Figure 14: Total Switching Losses vs Collector Current
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Figure 15: Thermal Impedance Figure 18: Ic vs Frequency
Figure 16: Turn-Off SOA For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: fMAX = (PD - PC) / (EON + EOFF) 1) The maximum power dissipation is limited by maximum junction to case thermal resistance: PD = T / RTHJ-C considering T = TJ - TC = 125 C- 75 C = 50C 2) The conduction losses are: PC = IC * VCE(SAT) * with 50% of duty cycle, VCESAT typical value @125C. 3) Power dissipation during ON & OFF commutations is due to the switching frequency: PSW = (EON + EOFF) * freq. 4) Typical values @ 125C for switching losses are used (test conditions: VCE = 390V, VGE = 15V, RG = 3.3 Ohm). Furthermore, diode recovery energy is included in the EON (see note 2), while the tail of the collector current is included in the EOFF measurements (see note 3).
Figure 17: Emitter-Collector Diode Characteristics
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Figure 19: Test Circuit for Inductive Load Switching Figure 21: Gate Charge Test Circuit
Figure 20: Switching Waveforms
Figure 22: Diode Recovery Times Waveform
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Table 11: Revision History
Date 07-June-2004 Revision 7 Stylesheet update. Added Max Values see Table 8 and 9 14-Jul-2004 8 Added Figure 22 Figure 19 updated, some datas have been modified Description of Changes
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STGY40NC60VD
Max247 MECHANICAL DATA
mm MIN. A A1 b b1 b2 c D e E L L1 4.70 2.20 1.00 2.00 3.00 0.40 19.70 5.35 15.30 14.20 3.70 TYP. MAX. 5.30 2.60 1.40 2.40 3.40 0.80 20.30 5.55 15.90 15.20 4.30 MIN. inch TYP. MAX.
DIM.
P025Q
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
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